Title :
Photon absorption in regimented quantum dot arrays
Author :
Rodríguez, A. Luque ; Rodríguez-Bolívar, S. ; Gómez-Campos, F.M.
Author_Institution :
Dept. de Electron. y Tecnol. de los Comput. Fac. de Cienc., Univ. de Granada, Granada, Spain
Abstract :
A study of the intraband absorption coefficient in cuboid InAs quantum dot periodic nanostructures embedded in GaAs is presented. The miniband structure of electron states in the conduction band is related to the shape of the quantum dots. The effect of strain is also taken into account in the simulations through a previous 8×8 k·p calculation. We analyze the influence on the absorption coefficient on the miniband structure of the systems.
Keywords :
III-V semiconductors; absorption coefficients; gallium arsenide; indium compounds; quantum computing; semiconductor quantum dots; InAs; conduction band; cuboid quantum dot periodic nanostructures; electron states; intraband absorption coefficient; miniband structure; photon absorption; regimented quantum dot arrays; Absorption; Gallium arsenide; Nanostructures; Optical polarization; Photonics; Quantum dots; Shape; 3D superlattices; Quantum dots; optical absorption;
Conference_Titel :
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location :
Madison, WI
Print_ISBN :
978-1-4673-0705-5
DOI :
10.1109/IWCE.2012.6242833
