Electron-hole transport asymmetry in boron-doped graphene field effect transistors

Author

Marconcini, P. ; Cresti, A. ; Triozon, F. ; Fiori, G. ; Biel, B. ; Niquet, Y.M. ; Macucci, M. ; Roche, S.

Author_Institution

Dipt. di Ing. dell´´Inf., Univ. di Pisa, Pisa, Italy

fYear

2012

fDate

22-25 May 2012

Firstpage

1

Lastpage

4

Abstract

One of the main drawbacks of undoped graphene for digital electronics applications is its am-bipolar behavior. Here we study the trasfer characteristics of transistors based on boron-doped graphene nanoribbons with atomic concentrations up to 0.6%, showing that the presence of doping generates a clear electron-hole transport asymmetry. In order to obtain these results, we introduce a method to accurately reproduce density functional theory (DFT) results using a selfconsistent tight-binding (TB) model with a proper distribution of fixed charges.

Keywords

boron; density functional theory; graphene; organic field effect transistors; C:B; DFT; atomic concentrations; boron-doped graphene field effect transistors; boron-doped graphene nanoribbons; density functional theory; digital electronics applications; electron-hole transport asymmetry; self-consistent TB model; self-consistent tight-binding model; Atomic layer deposition; Boron; Discrete Fourier transforms; Doping; Impurities; Nitrogen; Numerical models;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2012 15th International Workshop on

Conference_Location

Madison, WI

Print_ISBN

978-1-4673-0705-5

Type

conf

DOI

10.1109/IWCE.2012.6242844

Filename

6242844