Title :
Homogeneous broadening in quantum dots due to Auger scattering with wetting layer carriers
Author :
Nilsson, H.H. ; Zhang, J.-Z. ; Galbraith, I.
Author_Institution :
Dept. of Eng. & Phys. Sci., Heriot-Watt Univ., Edinburgh, UK
Abstract :
The homogeneous broadening in quantum dots due to various Auger scattering processes is calculated, accounting for exchange and screening. Many confined hole levels are required to obtain agreement with recent experimental results.
Keywords :
Auger effect; carrier density; high-speed optical techniques; semiconductor quantum dots; spectral line broadening; Auger scattering; hole level; homogeneous broadening; quantum dot; wetting layer carrier; Carrier confinement; Charge carrier density; Charge carrier processes; Elementary particle exchange interactions; Optical scattering; Particle scattering; Quantum dot lasers; Quantum dots; Semiconductor optical amplifiers; Thermodynamics;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1548831
