DocumentCode
2646983
Title
Homogeneous broadening in quantum dots due to Auger scattering with wetting layer carriers
Author
Nilsson, H.H. ; Zhang, J.-Z. ; Galbraith, I.
Author_Institution
Dept. of Eng. & Phys. Sci., Heriot-Watt Univ., Edinburgh, UK
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
504
Abstract
The homogeneous broadening in quantum dots due to various Auger scattering processes is calculated, accounting for exchange and screening. Many confined hole levels are required to obtain agreement with recent experimental results.
Keywords
Auger effect; carrier density; high-speed optical techniques; semiconductor quantum dots; spectral line broadening; Auger scattering; hole level; homogeneous broadening; quantum dot; wetting layer carrier; Carrier confinement; Charge carrier density; Charge carrier processes; Elementary particle exchange interactions; Optical scattering; Particle scattering; Quantum dot lasers; Quantum dots; Semiconductor optical amplifiers; Thermodynamics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1548831
Filename
1548831
Link To Document