Characterization of solderable metallization on power devices for 3-D packaging

Author

Haque, Shatil ; Lu, Guo-Quan

Author_Institution

Electr. Drive Syst., Ecostar, Dearborn, MI, USA

fYear

2000

fDate

2000

Firstpage

89

Lastpage

92

Abstract

This paper presents processing issues of solderable metallization on two different IGBTs (insulated gate bipolar transistors) for three-dimensional packaging. Identical metallization processes via sputtering have resulted in different contact resistances due to the different passivation materials (Si₃N₄ and polyimide) of the two devices. XPS and SEM characterization of surface compositions of device contact pads resulting in different electrical contact resistances are analyzed

Keywords

X-ray photoelectron spectra; contact resistance; insulated gate bipolar transistors; passivation; polymer films; power bipolar transistors; scanning electron microscopy; semiconductor device metallisation; semiconductor device packaging; sputter deposition; surface composition; 3D packaging; IGBTs; SEM; Si₃N₄; Si₃N₄ passivation materials; XPS; contact resistance; device contact pads; electrical contact resistances; insulated gate bipolar transistors; metallization processes; polyimide passivation materials; power devices; solderable metallization; sputtering; surface composition; Contacts; Electronics packaging; Fabrication; Insulated gate bipolar transistors; Metallization; Multichip modules; Power electronics; Power system interconnection; Sputtering; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Power Packaging, 2000. IWIPP 2000. International Workshop on

Conference_Location

Waltham, MA

Print_ISBN

0-7803-6437-6

Type

conf

DOI

10.1109/IWIPP.2000.885188

Filename

885188