Title :
Modeling of HgCdTe photodetectors in the LWIR region
Author :
Muralidharan, Pradyumna ; Vasileska, Dragica ; Wijewarnasuriya, Priyalal S.
Author_Institution :
Sch. of Electr., Arizona State Univ., Tempe, AZ, USA
Abstract :
We have developed a computer program that simulates the electrical characteristics of a p+ - n HgCdTe photodetector. Using solutions to the Poisson and Continuity equations we investigate low temperature behavior to determine optimum working conditions to enhance detectivity. Our model considers complete Fermi - Dirac statistics, major recombination mechanisms, band to band tunneling, trap assisted tunneling and impact ionization. Device performance was analyzed as a function of doping and temperature. Simulations show detectivity >; 1011 Jones at 77 K for Hg0.78Cd0.22Te.
Keywords :
II-VI semiconductors; Poisson equation; cadmium compounds; impact ionisation; infrared detectors; mercury compounds; photodetectors; quantum statistical mechanics; semiconductor device models; semiconductor doping; tunnelling; HgCdTe; LWIR region; Poisson equations; band-to-band tunneling; complete Fermi-Dirac statistics; computer program; continuity equations; device performance; doping; electrical characteristics; impact ionization; low temperature behavior; optimum working conditions; p+-n photodetector; recombination mechanisms; trap assisted tunneling; Absorption; Detectors; Equations; Materials; Mathematical model; Photonic band gap; Tunneling; II — VI Semiconductor materials; Infrared detectors; Tunneling;
Conference_Titel :
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location :
Madison, WI
Print_ISBN :
978-1-4673-0705-5
DOI :
10.1109/IWCE.2012.6242853
