Title :
A New Microwave High Power Transistor (Static Induction Transistor)
Author :
Kajiwara, Yugo ; Horikiri, K. ; Yukimoto, Y.
Abstract :
A high power transistor at microwave frequency has been realized by multi-chips of static induction transistor. An output power of 100 W at 1 GHz was obtained by good design of thermal balance and improvement of packaging. A gain of 2.2 dB and a drain efficiency of 42 % was obtained at output power of 100 W. The linear gain was 3.6 dB.
Keywords :
Frequency; Gain; Impurities; Microwave transistors; Packaging; Power amplifiers; Power generation; Power transistors; Temperature distribution; Wires;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123898
