Title :
Submillimeter Wave Frequency Multipliers and IMPATT Oscillators
Author :
Hirayama, M. ; Takada, T. ; Ishibashi, T. ; Ohmori, M.
Abstract :
GaAs frequency multipliers up to 600 GHz and Si p+-n-n+ IMPATT oscillators up to 430 GHz were developed. An output power of 0.12 mW at 450 GHz was obtained by the tripler using a thin film integrated circuit and a GaAs honeycomb-type Schottky barrier diode. The IMPATT oscillator cooled by liquid nitrogen delivered 2.2 mW at 412 GHz with 0.047 conversion efficiency.
Keywords :
Circuits; Frequency; Gallium arsenide; Microstrip; Oscillators; Schottky barriers; Schottky diodes; Semiconductor diodes; Substrates; Waveguide junctions;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123917
