Title :
Fabrication and characterization of Si/SiGe quantum dots with capping gate
Author :
Kodera, Tetsuo ; Fukuoka, Yuji ; Takeda, Kenta ; Obata, Toshiaki ; Yoshida, Katsuharu ; Sawano, Kentaro ; Uchida, Ken ; Shiraki, Yasuhiro ; Tarucha, Seigo ; Oda, Shunri
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
We study transport properties of quantum point contacts (QPCs) and quantum dots (QDs) with a global capping gate, fabricated on a Si/SiGe high electron mobility transistor (HEMT) wafer. By biasing the capping gate negatively, we succeed in making QPC operation point of surface Schottky gate negatively smaller and then reducing noise. We also observe Coulomb oscillations using a QD structure by suppressing charging noise with negative capping gate voltage.
Keywords :
Ge-Si alloys; elemental semiconductors; high electron mobility transistors; noise; quantum point contacts; semiconductor quantum dots; silicon; Coulomb oscillations; HEMT wafer; QD structure; QPC operation point; Si-SiGe; charging noise; global capping gate; high electron mobility transistor; high electron mobility transistor wafer; negative capping gate voltage; noise; quantum dots; quantum point contacts; surface Schottky gate; transport properties; HEMTs; Logic gates; MODFETs; Silicon; Silicon germanium; Voltage control; Voltage measurement;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243291
