The ESD protection improved by combining InGaN/GaN MQW LEDs with GaN Schottky diodes

GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and re-deposition techniques. By proper selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current and the forward turn-on voltage were both higher for the GaN LED with Schottky diode, it was found that the internal Schottky diode could significantly increase the ESD threshold from 450V to 1300V.