Title :
Magnetic tunnel junction for magnetoresistive random access memory and beyond
Author_Institution :
Center for Spintronics Integrated Syst., Tohoku Univ., Sendai, Japan
Abstract :
I have reviewed current status of MTJ and how it can be used in memories and logic circuits, referring to some of our recent implementations. The ultimate scalability of MTJ technology will be determined by both materials involved and processing technology. It is difficult to foresee how far in dimension one can go at this point. But we should be able to learn from the materials science for hard disk media that can realize high Δ at dimensions less than 10nm and is continuing to develop a patterned one.
Keywords :
CMOS logic circuits; MRAM devices; magnetic tunnelling; MTJ technology; logic circuits; magnetic tunnel junction; magnetoresistive random access memory; processing technology; ultimate scalability; Magnetic separation; Magnetic tunneling; Materials; Nonvolatile memory; Perpendicular magnetic recording; Random access memory;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243328
