Title :
Recent progress of resistive switching random access memory (RRAM)
Author :
Wu, Yi ; Yu, Shimeng ; Guan, Ximeng ; Wong, H. -S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
This paper gives an overview of recent works on metal oxide resistive switching memory (RRAM). We explored the stochastic nature of resistive switching in metal oxide RRAM and a 2-D analytical solver was established to explain the switching parameter variations in HfOx-based RRAM. As an example of application beyond digital memory/storage, AlOx-based RRAM was explored for neuromorphic computing.
Keywords :
aluminium compounds; hafnium compounds; random-access storage; stochastic processes; 2D analytical solver; AlOx; HfOx; RRAM; digital memory-storage; metal oxide resistive switching memory; neuromorphic computing; resistive switching; resistive switching random access memory; stochastic nature; switching parameter variations; Electrodes; Hafnium compounds; Materials; Resistance; Switches; Very large scale integration;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243331
