Title :
Silicon single-electron transfer devices: Ultimate control of electric charge
Author :
Fujiwara, Akira ; Yamahata, Gento ; Nishiguchi, Katsuhiko ; Lansbergen, Gabriel P. ; Ono, Yukinori
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
Abstract :
In this paper we describe our recent efforts to develop SE transfer devices based on Si nanotechnology.
Keywords :
electric charge; elemental semiconductors; silicon; single electron transistors; Si; electric charge; nanotechnology; silicon single-electron transfer devices; single-electron transistor; Clocks; Current measurement; Logic gates; Semiconductor device measurement; Sensors; Silicon; Standards;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243336
