• DocumentCode
    2652407
  • Title

    Front-end-of-line quadrature-clocked voltage-dependent capacitance measurement

  • Author

    Polonsky, Stas ; Solomon, Paul ; Liao, Jiun-Hsin ; Medina, Lou ; Ketchen, Mark

  • Author_Institution
    T.J.. Watson Res. Center, IBM Res., Yorktown Heights, NY, USA
  • fYear
    2011
  • fDate
    4-7 April 2011
  • Firstpage
    4
  • Lastpage
    7
  • Abstract
    We report on Front-End-Of-Line Quadrature-clocked Voltage-dependent Capacitance Measurement (QVCM), a charge based capacitance measurement technique applicable to modern logic CMOS technologies with leaky gate oxides. QVCM test structures are designed using only first level of metal and support parallel test of multiple devices. Results for 45 nm SOI FETs illustrate the power of the developed technique.
  • Keywords
    CMOS logic circuits; capacitance measurement; field effect transistors; integrated circuit design; integrated circuit testing; logic testing; silicon-on-insulator; QVCM test structures; SOI FET; charge-based capacitance measurement technique; front-end-of-line quadrature-clocked voltage-dependent capacitance measurement; leaky gate oxides; logic CMOS technologies; size 45 nm; Capacitance; Capacitance measurement; Clocks; Current measurement; Detectors; FETs; Logic gates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
  • Conference_Location
    Amsterdam
  • ISSN
    1071-9032
  • Print_ISBN
    978-1-4244-8526-0
  • Electronic_ISBN
    1071-9032
  • Type

    conf

  • DOI
    10.1109/ICMTS.2011.5976851
  • Filename
    5976851
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2652407