DocumentCode :
2652453
Title :
Carrier control by neutron-transmutation doping of semi-insulating GaAs
Author :
Benchiguer, T. ; Mari, B. ; Schwab, C.
Author_Institution :
Universite Louis Pasteur, France
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
45
Lastpage :
50
Keywords :
Charge transfer; Doping; Gallium arsenide; Lattices; Metastasis; Neutrons; Optical sensors; Paramagnetic materials; Paramagnetic resonance; Semiconductor process modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752675
Filename :
752675
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2652453
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