Title :
Self-improvement of cell stability in SRAM by post fabrication technique
Author :
Kumar, Anil ; Saraya, Takuya ; Miyano, Shinji ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
The post fabrication technique for self-improvement of SRAM cell stability is validated by experiment using 1k DMA SRAM TEG array. It is shown that the stability of unbalance cells is automatically improved by merely applying stress voltage to VDD terminal. The mechanism of the phenomena is also analyzed by measuring VTH of all transistors before and after stress and it is newly found that |VTH| of weaker PFET in the cell is selectively lowered by the self-improve mechanism.
Keywords :
SRAM chips; field effect transistors; 1k DMA SRAM TEG array; PFET; SRAM cell stability; post fabrication technique; self-improve mechanism; self-improvement; stress voltage; Correlation; Fabrication; Random access memory; Stability analysis; Stress; Thermal stability; Transistors;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
DOI :
10.1109/SNW.2012.6243348
