Title :
High-Power MIC Diode Limiters for S- and X-Band RADARs
Author :
Hori, S. ; Kuroda, M. ; Kanema, K. ; Okano, S.
fDate :
April 30 1979-May 2 1979
Abstract :
S- and X-band passive MIC diode limiters have been developed for high power applications. Two PIN diodes with I layer thickness of 9.5mu m and 1.5mu m are shunt-mounted to 50 ohm microstrip lines. The limiters can handle 2-kW peak input power with less than 100mW peak leakage power for pulsed RF signals of 1mu s width and 0.1 percent duty ratio.
Keywords :
Diodes; Impedance measurement; Microstrip; Microwave integrated circuits; Power measurement; Radar applications; Radio frequency; Rubber; Space vector pulse width modulation; Substrates;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124057
