DocumentCode
2652686
Title
High-Power MIC Diode Limiters for S- and X-Band RADARs
Author
Hori, S. ; Kuroda, M. ; Kanema, K. ; Okano, S.
fYear
1979
fDate
April 30 1979-May 2 1979
Firstpage
329
Lastpage
331
Abstract
S- and X-band passive MIC diode limiters have been developed for high power applications. Two PIN diodes with I layer thickness of 9.5mu m and 1.5mu m are shunt-mounted to 50 ohm microstrip lines. The limiters can handle 2-kW peak input power with less than 100mW peak leakage power for pulsed RF signals of 1mu s width and 0.1 percent duty ratio.
Keywords
Diodes; Impedance measurement; Microstrip; Microwave integrated circuits; Power measurement; Radar applications; Radio frequency; Rubber; Space vector pulse width modulation; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location
Orlando, FL, USA
Type
conf
DOI
10.1109/MWSYM.1979.1124057
Filename
1124057
Link To Document