• DocumentCode
    2652755
  • Title

    Oxygen-induced high-k degradation in TiN/HfSiO gate stacks

  • Author

    Hosoi, Takuji ; Odake, Yuki ; Chikaraishi, Keisuke ; Arimura, Hiroaki ; Kitano, Naomu ; Shimura, Takayoshi ; Watanabe, Heiji

  • Author_Institution
    Grad. Sch. of Eng., Osaka Univ., Suita, Japan
  • fYear
    2012
  • fDate
    10-11 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have investigated the diffusion kinetics of Hf in TiN/HfSiO gate stacks. The Hf upward diffusion is found to be independent of interfacial SiO2 growth, but depends on the amount of oxygen in the gate stacks. It is also revealed that Hf diffusion into TiN electrode occurs at above 650°C and leads to high-k degradation.
  • Keywords
    diffusion; electrodes; hafnium compounds; high-k dielectric thin films; titanium compounds; TiN-HfSiO; diffusion kinetics; electrode; gate stacks; oxygen induced high-k degradation; Hafnium; High K dielectric materials; Logic gates; Oxidation; Silicon; Surface treatment; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    2161-4636
  • Print_ISBN
    978-1-4673-0996-7
  • Electronic_ISBN
    2161-4636
  • Type

    conf

  • DOI
    10.1109/SNW.2012.6243358
  • Filename
    6243358
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2652755