DocumentCode :
2652866
Title :
Quantitative photoelastic characterization of residual strain and its correlation with dislocation density profile in semi-insulating LEC-grown GaAs wafers
Author :
Yamada, M. ; Fukuzawa, M. ; Kimura, N. ; Kaminaka, K. ; Yokogawa, M.
Author_Institution :
Kyoto Institute of Technology, Japan
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
201
Lastpage :
210
Keywords :
Birefringence; Capacitive sensors; Density measurement; Gallium arsenide; Optical computing; Optical polarization; Photoelasticity; Residual stresses; Strain measurement; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752700
Filename :
752700
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2652866
بازگشت