Title :
Gated diode in breakdown voltage collapse regime — A test vehicle for oxide characterization
Author :
Rusu, Ana ; Badila, M. ; Rusu, Ana
Author_Institution :
Univ. Politeh. of Bucharest, Bucharest, Romania
Abstract :
A new method for oxide characterization, based on flat-band voltage shift direct measurement is presented. This opportunity appears in the breakdown voltage collapse, for a gated diode operated in the common-cathode configuration. Additionally, the proposed method outfits uniform conditions for voltage drop across the oxide and carrier multiplication.
Keywords :
MOSFET; electric breakdown; semiconductor device measurement; voltage measurement; breakdown voltage collapse regime; carrier multiplication; common-cathode configuration; gated diode; oxide characterization; voltage drop; Current measurement; Junctions; Logic gates; Semiconductor device measurement; Semiconductor diodes; Temperature measurement; Voltage measurement; Flat-band voltage shift; breakdown voltage collapse; gated-diode;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4244-8526-0
Electronic_ISBN :
1071-9032
DOI :
10.1109/ICMTS.2011.5976875
