DocumentCode
2653044
Title
Techniques for Improving the Stability and Amplifier Performance of X-Band GaAs Power FETs
Author
Temple, S.J. ; Galani, Z. ; Healy, R.M. ; Hewitt, B.S.
fYear
1979
fDate
April 30 1979-May 2 1979
Firstpage
390
Lastpage
392
Abstract
Via hole source connections together with on-carrier matching significantly improve X-band power FET performance. Via hole connections eliminate spurious oscillations by reducing common-lead source inductance. On-carrier matching networks improve the power and gain of X-band FET amplifiers by partially matching the very low input and output impedance of large periphery devices with impedance transformation networks located as close to the transistor as possible.
Keywords
Bonding; Frequency; Gallium arsenide; Impedance; Inductance; Microwave FETs; Power amplifiers; Stability; Testing; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location
Orlando, FL, USA
Type
conf
DOI
10.1109/MWSYM.1979.1124078
Filename
1124078
Link To Document