New ZVS analysis of PWM converters applied to super-junction, GaN and SiC power FETs

Author

Miftakhutdinov, Rais

Author_Institution

High Voltage Power Solutions, Texas Instrum. Inc., Cary, NC, USA

fYear

2015

fDate

15-19 March 2015

Firstpage

336

Lastpage

341

Abstract

High efficiency and power density conversion requires minimizing switching losses associated with power FET Coss recharging. Experiments show significant differences between small-signal based Coss data provided in datasheets versus large signal switching behavior of FETs for new Si super-junction, SiC and GaN technologies. Thus, better accuracy Coss models for switching losses are suggested and new analytical ZVS conditions established for popular PWM converter topologies allowing meet efficiency goals at wide operating range.

Keywords

III-V semiconductors; PWM power convertors; gallium compounds; losses; power field effect transistors; silicon compounds; wide band gap semiconductors; zero voltage switching; GaN; PWM converter topology; SiC; ZVS; power FET Coss recharging; signal switching behavior; superjunction FET; switching losses; Capacitance; Field effect transistors; Silicon; Silicon carbide; Switches; Zero voltage switching; Gallium Nitride (GaN); MOSFET; Silicon Carbide (SiC); Soft Switching; Super Junction Devices; ZVS Converters;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE

Conference_Location

Charlotte, NC

Type

conf

DOI

10.1109/APEC.2015.7104372

Filename

7104372