• DocumentCode
    2653585
  • Title

    Improved thermal stability of power SiGe heterojunction bipolar transistor with novel emitter structure

  • Author

    Hu, Ning ; Zhang, Wan Rong ; Chen, Liang ; Huang, Lu ; Huang, Vi Wen

  • Author_Institution
    Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol.(BJUT), Beijing, China
  • fYear
    2009
  • fDate
    20-23 Oct. 2009
  • Firstpage
    1027
  • Lastpage
    1030
  • Abstract
    A novel segmented emitter structure with nonuniform finger length and spacing has been presented to alleviate adverse thermal effects in multi-finger SiGe HBT power device. Considering the various thermal resistances of different components for the segmented multi-finger HBT, an appropriate thermal model is developed. Using this model, the thermal simulation for a ten-finger power SiGe HBT with segmented emitter structure is performed and the three-dimensional temperature distribution on emitter fingers is obtained. Compared with traditional emitter structure, the maximum junction temperature reduce significantly from 416.3 K to 405 K, the thermal resistance reduce from 154.67 K/W to 140 K/W, thus the thermal stability of improved structure is enhanced apparently.
  • Keywords
    Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; power semiconductor devices; temperature distribution; thermal stability; 3D temperature distribution; HBT power device; SiGe; emitter structure; power heterojunction bipolar transistor; temperature 405 K; temperature 416.3 K; thermal stability; Contracts; Control engineering; Educational institutions; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Temperature; Thermal resistance; Thermal stability; Heterojunction bipolar transistors; segmented emitter; silicon-germanium; thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2009. ASICON '09. IEEE 8th International Conference on
  • Conference_Location
    Changsha, Hunan
  • Print_ISBN
    978-1-4244-3868-6
  • Electronic_ISBN
    978-1-4244-3870-9
  • Type

    conf

  • DOI
    10.1109/ASICON.2009.5351519
  • Filename
    5351519