DocumentCode :
2653667
Title :
High-reliable multi-level phase change memory with bipolar selectors
Author :
Xu, Le ; Xie, Yufeng ; Lin, Yinyin
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
fYear :
2009
fDate :
20-23 Oct. 2009
Firstpage :
1011
Lastpage :
1014
Abstract :
This paper proposed a novel 2B2R (two bipolar transistors & two phase change resistors) cell structure and a ratio-based state definition scheme for 3-value N-doped Ge2Se2Te5 phase change memory, and realized high density and high reliable phase change storage.
Keywords :
IV-VI semiconductors; bipolar transistors; germanium compounds; phase change memories; Ge2Se2Te5; bipolar selectors; cell structure; multilevel phase change memory; two bipolar transistors; two phase change resistor; Annealing; Application specific integrated circuits; CMOS technology; Conductivity; Laboratories; Partial response channels; Phase change materials; Phase change memory; Resistors; Semiconductor memory; 2B2R; Phase change memory; multilevel storage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
Type :
conf
DOI :
10.1109/ASICON.2009.5351523
Filename :
5351523
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2653667
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