• DocumentCode
    2653667
  • Title

    High-reliable multi-level phase change memory with bipolar selectors

  • Author

    Xu, Le ; Xie, Yufeng ; Lin, Yinyin

  • Author_Institution
    State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
  • fYear
    2009
  • fDate
    20-23 Oct. 2009
  • Firstpage
    1011
  • Lastpage
    1014
  • Abstract
    This paper proposed a novel 2B2R (two bipolar transistors & two phase change resistors) cell structure and a ratio-based state definition scheme for 3-value N-doped Ge2Se2Te5 phase change memory, and realized high density and high reliable phase change storage.
  • Keywords
    IV-VI semiconductors; bipolar transistors; germanium compounds; phase change memories; Ge2Se2Te5; bipolar selectors; cell structure; multilevel phase change memory; two bipolar transistors; two phase change resistor; Annealing; Application specific integrated circuits; CMOS technology; Conductivity; Laboratories; Partial response channels; Phase change materials; Phase change memory; Resistors; Semiconductor memory; 2B2R; Phase change memory; multilevel storage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2009. ASICON '09. IEEE 8th International Conference on
  • Conference_Location
    Changsha, Hunan
  • Print_ISBN
    978-1-4244-3868-6
  • Electronic_ISBN
    978-1-4244-3870-9
  • Type

    conf

  • DOI
    10.1109/ASICON.2009.5351523
  • Filename
    5351523
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2653667