Title :
A 4w, 56dB Gain, Microstrip Amplifier at 15 GHz Utilizing GaAs FETs and IMPATT Diodes
Author :
Sokolov, V. ; Namordi, M.R. ; Doerbeck, F.H.
fDate :
April 30 1979-May 2 1979
Abstract :
Performance results and design considerations are presented for an all solid-state power amplifier suitable for spacecraft transmitter applications. Design emphasis is placed on high power, high efficiency and high reliability operation, as well as on compact amplifier construction.
Keywords :
Diodes; FETs; Gallium arsenide; High power amplifiers; Microstrip; Operational amplifiers; Power amplifiers; Solid state circuits; Space vehicles; Transmitters;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124113
