• DocumentCode
    2653899
  • Title

    MSI High Speed Low Power GaAs ICs Using Schottky Diode FET Logic

  • Author

    Long, S.I. ; Welch, B.M. ; Eden, R.C. ; Lee, F.S. ; Zucca, R.

  • fYear
    1979
  • fDate
    April 30 1979-May 2 1979
  • Firstpage
    509
  • Lastpage
    511
  • Abstract
    A new approach to the design and fabrication of planar high speed GaAs integrated circuits is described. Experimental digital circuits of MSI level complexities have been fabricated showing high gate density, low dynamic switching energies and very high switching speeds.
  • Keywords
    Circuit testing; FETs; Fabrication; Gallium arsenide; Implants; Logic gates; Logic testing; Propagation delay; Schottky diodes; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1979 IEEE MTT-S International
  • Conference_Location
    Orlando, FL, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1979.1124120
  • Filename
    1124120
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2653899