• DocumentCode
    2654532
  • Title

    Integrated DC link capacitor/bus structures to minimize external ESL contribution to voltage overshoot

  • Author

    Brubaker, M.A. ; Kirbie, H.C. ; Hosking, T.A.

  • Author_Institution
    SBE, Inc., Barre, VT, USA
  • fYear
    2012
  • fDate
    18-20 June 2012
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Voltage overshoot is defined by stray series inductance and turn-off time, which must be managed to avoid failure of IGBT´s in inverter applications. The total equivalent series inductance (ESL) is dictated by internal switch branch inductance with a significant contribution in the current path to the DC link capacitor. Using traditional topologies, external ESL dominates and by-pass capacitors (“snubbers”) are used to mitigate overshoot. Integrated capacitor/bus designs provide an external ESL comparable to internal values for commercial IGBT´s. The minimized ESL regime allows reduced switch turn-off time with slightly increased losses to manage overshoot without the cost, space, weight, dissipation, and reliability associated with by-pass capacitors.
  • Keywords
    failure analysis; insulated gate bipolar transistors; invertors; power capacitors; reliability; snubbers; IGBT; bus structure design; by-pass capacitors; external ESL; failure avoidance; integrated DC link capacitor; internal switch branch inductance; inverter; reliability; snubbers; stray series inductance; switch turn-off time; total equivalent series inductance; voltage overshoot; Capacitors; Inductance; Insulated gate bipolar transistors; Inverters; Logic gates; Snubbers; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Transportation Electrification Conference and Expo (ITEC), 2012 IEEE
  • Conference_Location
    Dearborn, MI
  • Print_ISBN
    978-1-4673-1407-7
  • Electronic_ISBN
    978-1-4673-1406-0
  • Type

    conf

  • DOI
    10.1109/ITEC.2012.6243453
  • Filename
    6243453