• DocumentCode
    2654584
  • Title

    Improved Elementary Cell GaAs Power FET Structure

  • Author

    Baudet, P.

  • fYear
    1980
  • fDate
    28-30 May 1980
  • Firstpage
    3
  • Lastpage
    5
  • Abstract
    An improved design for the elementary cell of X-band power GaAs FETs is described. It includes: a buffer layer, a graded doping profile, an offset recessed gate structure, a multifinger high density gate structure and via holes. Furthermore, three different types of source interconnections for the interdigitated cell will be compared.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave symposium Digest, 1980 IEEE MTT-S International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1980.1124157
  • Filename
    1124157
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2654584