DocumentCode
26561
Title
Sn-Based Group-IV Structure for Resonant Tunneling Diodes
Author
Kun-Yuan Wu ; Bing-Hung Tsai ; Jia-Zhi Chen ; Guo-En Chang ; Mashanov, V.I. ; Cheng, H.H. ; Sun, Guofa ; Soref, Richard A.
Author_Institution
Center for Condensed Matter Sci., Nat. Taiwan Univ., Taipei, Taiwan
Volume
34
Issue
8
fYear
2013
fDate
Aug. 2013
Firstpage
951
Lastpage
953
Abstract
We report a theoretical investigation on the electrical properties of a Sn-based group-IV structure for a resonant tunneling diode (RTD). The analysis on the composition-dependent strain, energy profile, and current-voltage characteristic of a double-barrier heterostructure shows that the peak current density and peak-to-valley ratio are enhanced with a moderated tensile strain in the barrier layer, providing an alternative approach for group-IV RTDs.
Keywords
resonant tunnelling diodes; tin; Sn; barrier layer; double-barrier heterostructure; electrical properties; group-IV structure; peak current density; peak-to-valley ratio; resonant tunneling diodes; tensile strain; Current density; Resonant tunneling devices; Silicon; Tensile strain; Tin; Si-based resonant tunneling diodes (RTDs); SiGeSn alloys; peak current density; peak-to-valley ratio; strain-free QW; strained QW;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2266540
Filename
6553587
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