Title :
Addressing challenges in device-circuit modeling for extreme environments of space
Author :
Raman, Ashok ; Turowski, Marek ; Fedoseyev, Alex ; Cressler, John D.
Author_Institution :
CFD Res. Corp., Huntsville
Abstract :
The authors have implemented a robust CNSPACK-based linear equation solver in an in-house TCAD tool. This solver is enhanced with efficient matrix pre-conditioning algorithms to enable accurate handling of a wide scale of floating-point numbers. Sample results are shown for very low temperature radiation response of a 0.12-mum NMOSFET and I-V curves of 0.13-mum SiGe HBT. The solution is very stable. However, the match against corresponding experimental data is not good due to inaccuracy of physical models (ongoing work).
Keywords :
Ge-Si alloys; MOSFET; heterojunction bipolar transistors; technology CAD (electronics); CNSPACK-based linear equation solver; HBT; NMOSFET; SiGe; TCAD tool; device-circuit modeling; floating-point numbers; pre-conditioning algorithms; radiation response; size 0.12 mum; size 0.13 mum; Circuit simulation; Computational fluid dynamics; Educational institutions; Germanium silicon alloys; Radiation effects; Semiconductor device modeling; Silicon germanium; Solid modeling; Space technology; Temperature distribution;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422236
