• DocumentCode
    2656486
  • Title

    Vertical profile optimisation of a self-aligned SiGeC HBT process with an n-cap emitter

  • Author

    Donkers, J.J.T.M. ; Magnée, P. H C ; Huizing, H.G.A. ; Agarwal, P. ; Aksen, E. ; Meunier-Beillard, P. ; Neuilly, F. ; Havens, R.J. ; Vanhoucke, T.

  • Author_Institution
    Philips Res. Leuven, Belgium
  • fYear
    2003
  • fDate
    28-30 Sept. 2003
  • Firstpage
    111
  • Lastpage
    114
  • Abstract
    SiGeC heterojunction bipolar transistors (HBTs) with a cut-off frequency of fT>150GHz, have been realised with an n-type emitter cap, using a self-aligned integration scheme. Device simulations were used to tune the emitter base side of the non-selective epitaxially grown SiGeC layer. The experimental results are in very good agreement with the predictions.
  • Keywords
    carbon; circuit optimisation; heterojunction bipolar transistors; integrated circuit manufacture; semiconductor process modelling; silicon compounds; SiGe:C; cut-off frequency; device simulations; emitter base tuning; heterojunction bipolar transistors; n-type emitter cap; nonselective epitaxially grown layer; self-aligned HBT process; self-aligned integration; vertical profile optimisation; Carbon; Circuit optimization; Heterojunction bipolar transistors; Integrated circuit manufacture; Semiconductor process modeling; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7800-8
  • Type

    conf

  • DOI
    10.1109/BIPOL.2003.1274947
  • Filename
    1274947
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2656486