Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayers

Author

Lim, Andy Eu-Jin ; Fang, Wei-Wei ; Liu, Fangyue ; Lee, Rinus T P ; Samudra, Ganesh S. ; Kwong, Dim-Lee ; Yeo, Yee-Chia

Author_Institution

Nat. Univ. of Singapore (NUS), Singapore

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

A quantitative RE-O interface dipole model was presented to explain Ni-FUSI Phi_m using RE-based interlayers (RE_IL). The expected strengths of interface RE-O dipole and extracted Phi_m values show excellent correlation. It further demonstrates that the NiSi Phi_m on high- k dielectrics can be engineered by the insertion of thin RE_IL at the high-k/SiO₂ interface.

Keywords

CMOS integrated circuits; MOSFET; dielectric materials; rare earth metals; silicon compounds; CMOS metal gate integration; NMOS Ni-FUSI gate function; RE-O interface dipole mechanism; RE-based interlayers; SiO₂; high- k dielectrics; nickel fully silicided gate; rare-earth metal -based dielectric interlayers; Bonding; Channel bank filters; Educational institutions; Erbium; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOS devices; Microelectronics; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422245

Filename

4422245