DocumentCode :
2656647
Title :
Reliability issues in SOI technologies and circuits
Author :
Pelloie, Jean-Luc
Author_Institution :
SOISIC, Grenoble, France
fYear :
2003
fDate :
28-30 Sept. 2003
Firstpage :
151
Lastpage :
155
Abstract :
After explaining why SOI technologies bring higher speed, lower power consumption, higher integration and future CMOS perspectives, this paper addresses the reliability issues at the different stages of the development cycle: SOI wafer, device and circuit design.
Keywords :
elemental semiconductors; integrated circuit design; integrated circuit reliability; silicon; silicon-on-insulator; SOI device; SOI wafer; Si; circuit design; circuit reliability; silicon-on-insulator; Integrated circuit design; Integrated circuit reliability; Silicon; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
ISSN :
1088-9299
Print_ISBN :
0-7803-7800-8
Type :
conf
DOI :
10.1109/BIPOL.2003.1274956
Filename :
1274956
Link To Document :
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