DocumentCode :
2656767
Title :
A 150GHz fT/fmax 0.13μm SiGe:C BiCMOS technology
Author :
Laurens, M. ; Martinet, B. ; Kermarrec, O. ; Campidelli, Y. ; Deléglise, F. ; Dutarte ; Troillard, G. ; Gloria, D. ; Bonnouvrier, J. ; Beerkens, R. ; Rousset, V. ; Leverd, F. ; Chantre, A. ; Monroy, A.
Author_Institution :
STMicroelectronics, Crolles, France
fYear :
2003
fDate :
28-30 Sept. 2003
Firstpage :
199
Lastpage :
202
Abstract :
This paper describes a manufacturable 0.13μm SiGe:C BiCMOS technology for optical networking and wireless applications, with npn fT/fmax of 166/175GHz and 1.8V BVCEO, dual VT and dual gate oxide CMOS devices, high quality passives and a 6-level copper back-end.
Keywords :
BiCMOS integrated circuits; carbon; circuit optimisation; heterojunction bipolar transistors; integrated circuit manufacture; silicon compounds; 0.13 micron; 1.8 V; 150 GHz; 166 GHz; 175 GHz; BiCMOS; Cu; HBT; SiGe:C; copper back-end; gate oxide CMOS devices; heterojunction bipolar transistor; high quality passives; npn fT/fmax; optical networking; wireless applications; BiCMOS integrated circuits; Carbon; Circuit optimization; Heterojunction bipolar transistors; Integrated circuit manufacture; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
ISSN :
1088-9299
Print_ISBN :
0-7803-7800-8
Type :
conf
DOI :
10.1109/BIPOL.2003.1274965
Filename :
1274965
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2656767
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