Title :
Novel SONOS-type nonvolatile memory device with stacked tunneling and charge-trapping layers
Author :
Tsai, Ping-Hung ; Chang-Liao, Kuei-Shu ; Wu, Tai-Yu ; Wang, Tien-Ko ; Tzeng, Pei-Jer ; Lin, Cha-Hsin ; Lee, Lung-Sheng ; Tsai, Ming-Jin
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu
Abstract :
In this work, the electrical characteristics of SONOS memory devices with various stacked tunneling oxide and stacked trapping layers were studied.
Keywords :
electric properties; flash memories; silicon; silicon compounds; tunnelling; SONOS-type nonvolatile memory device; Si-SiO2-SiN-SiO2-Si; charge-trapping layers; electrical characteristics; flash memory; polysilicon-oxide-nitride-oxide-silicon device; stacked tunneling oxide; Educational institutions; Electric variables; Flash memory; Furnaces; Hafnium oxide; Nonhomogeneous media; Nonvolatile memory; Photonic band gap; SONOS devices; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422267
