FinFETs with both large body factor and high drive-current

In recent years, the increase in leakage current in MOSFETs has become a crucial problem. The reduction of leakage is often accompanied by the reduction of drive-current. The back-bias scheme is one of the most promising schemes to realize both low leakage current and high drive-current by using the body effect. The inter-chip variations can also be compensated by the back-bias scheme. On the other hand, FinFET is a promising candidate for future device structure. New kinds of FinFETs, such as bulk FinFETs, have also been reported. We have already reported that bulk FinFETs with carefully chosen impurity profile show larger body factor gamma than SOI FinFETs. However, drive-current of the devices with large gamma tends to be small, which has not been considered in the previous report. In this paper, we report further optimized structure of bulk and SOI FinFETs from the viewpoint of both the back-bias scheme and high drive-current by 3D device simulation.