Title :
Super Low Noise Packaged GaAs FETS for Ku Band
Author :
Suzuki, T. ; Ito, M. ; Nara, A. ; Kadowaki, Y. ; Nakatani, M.
Abstract :
By selecting a high quality GaAs epitaxial wafer and reducing parasitics, packaged FETs with NF/sub min/ of 2.4 dB and G/sub a/ of 7.5 dB at 18 GHz were produced. Using these FETs, a single stage amplifler with NF of 2.7 dB and G of 6.4 dB at 18 GHz was constructed.
Conference_Titel :
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/MWSYM.1980.1124289
