• DocumentCode
    2657501
  • Title

    Wavefunction penetration effect on C-V characteristic of double gate MOSFET

  • Author

    Alam, M.K. ; Alam, A. ; Ahmed, S. ; Rabbani, M.G. ; Khosru, Q.D.M.

  • Author_Institution
    Bangladesh Univ. of Eng. & Technol., Dhaka
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present the effect of wavefunction penetration on C-V characteristic of ultra-thin body double gate MOSFET using an accurate and numerically extremely efficient fully coupled one dimensional Schrodinger-Poisson self-consistent solver. Penetration effects have been studied and presented for different values of dielectric and silicon body thickness.
  • Keywords
    MOSFET; Poisson equation; Schrodinger equation; semiconductor device models; wave functions; C-V characteristic; Schrodinger-Poisson self-consistent solver; dielectric body thickness; double gate MOSFET; silicon body thickness; ultra-thin body MOSFET; wavefunction penetration effect; Boundary conditions; Capacitance; Capacitance-voltage characteristics; Dielectrics; Educational institutions; Electrodes; MOSFET circuits; Poisson equations; Voltage; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422300
  • Filename
    4422300
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2657501