Title :
Physics-based numerical simulation for design of high-voltage, extremely-high current density SiC power devices
Author :
Hillkirk, Leonardo M. ; Hefner, Allen R. ; Dutton, Robert W.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg
Abstract :
This paper presents a selection of results from numerical studies addressing various problems highly relevant to the operation of SiC power devices in power systems such as the speed optimization of high-voltage SiC PiN diodes and the operation of SiC thyristors under extremely- high-current pulse-power conditions. Various methods used to optimize the reverse-recovery performance of 4H-SiC PiN power diodes are studied, including base life time control, emitter efficiency reduction, and regional lifetime control. Pulse-power thyristors are also simulated to determine the limits of reliable performance due to self-heating-induced failure.
Keywords :
current density; numerical analysis; p-i-n diodes; pulsed power supplies; silicon compounds; thyristors; wide band gap semiconductors; PiN diodes; SiC; emitter efficiency reduction; extremely-high current density power devices; high-current pulse-power conditions; physics-based numerical simulation; power systems; pulse-power thyristors; self-heating-induced failure; Convergence of numerical methods; Current density; Diodes; Numerical simulation; Power system reliability; Pulse power systems; Semiconductor process modeling; Silicon carbide; Thyristors; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422305
