Redesign and optimization of semiconductor devices

Recently, we have developed an automated technique for the design of random fluctuation resistant structures of semiconductor devices. This technique allowed us to recompute ("redesign") the doping profile of any general semiconductor device such as MOSFET, HEMT, SOI, etc. in order to decrease the fluctuations of device parameters induced by random doping fluctuations. In this oral presentation we present a similar optimization technique for the maximization of device performance under various constraints. The technique is based on the computation of doping sensitivity functions and the multidimensional minimization of device parameters, in which the variables are the values of the doping concentrations at each location inside the device. Constraints are taken into consideration by using the Lagrange multipliers technique.