Title :
Modeling and characterization of soft breakdown phenomena in MOS devices with ultrathin high-κ gate dielectric
Author :
Shahil, K.M.Farhan ; Arafat, Md Nayeem ; Khosru, Q.D.M. ; Khan, M. Rezwan
Author_Institution :
Bangladesh Univ. of Eng. & Technol., Dhaka
Abstract :
A quantum mechanical (QM) model is presented to describe the post soft breakdown (SBD) phenomena for MOS structure with ultrathin high-k gate dielectric. We model the SBD event by considering a lowered barrier height at the SBD spot area. Both the current density through the fresh stack gate oxide area and the SBD spot area are evaluated using a quantum mechanical wave impedance method.
Keywords :
MIS devices; MOSFET; current density; electric breakdown; high-k dielectric thin films; MOS devices; MOS structure; MOSFET; current density; quantum mechanical wave impedance; soft breakdown; ultrathin high-k gate dielectric; Argon; Current density; Dielectric breakdown; Dielectric devices; Dielectric substrates; Educational institutions; Effective mass; MOS devices; Quantum mechanics; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422321
