The operation of a-Si:H TFTs flexible electronics on plastic substrate

Author

Lee, M.H. ; Chang, S.T. ; Liu, Y.-T. ; Huang, C.-F. ; Ho, K.-Y. ; Chen, P.-C. ; Syu, R.-S. ; Shen, K.-W.

Author_Institution

Nat. Taiwan Normal Univ., Taipei

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

In this paper a-Si:H TFTs with the external the mechanical strain and bending cycles is studied. In addition, the trap states distribution is also discussed. Besides, the temperature distribution of a-Si:H TFTs on plastic substrate is an important issue for operation. A thermal conduction layer dissipates the accumulated heat during operation is designed and it calculates the temperature distribution in this work.

Keywords

amorphous semiconductors; cooling; elemental semiconductors; flexible electronics; hydrogen; silicon; temperature distribution; thin film transistors; Si:H; a-Si:H thin film transistor operation; accumulated heat dissipation; flexible electronics; mechanical strain; plastic substrate; temperature distribution; thermal conduction layer; trap states distribution; Bonding; Capacitive sensors; Degradation; Flexible electronics; Plastics; Polyimides; Substrates; Temperature distribution; Tensile strain; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422331

Filename

4422331