DocumentCode :
2658339
Title :
Broad tuning ultra low noise DROs at 10 GHZ utilising ceramic based resonators
Author :
Sallin, Marc ; Zhou, Liang ; Broomfield, Carl ; Everard, J.
Author_Institution :
Dept. of Electron., Univ. of York, UK
fYear :
2003
fDate :
4-8 May 2003
Firstpage :
411
Lastpage :
416
Abstract :
This paper describes the design of very low noise, tunable, X band dielectric resonator oscillators (DROs) demonstrating phase noise performance of -135 dBc/Hz at 10 kHz offset. A variety of resonator configurations utilising BaTiO3 resonators are presented demonstrating unloaded Qs from 10,000 to 30,000. These resonators are optimally coupled to the amplifiers for minimum phase noise where QL/Q0= 1/2 and S21=-6 dB. SiGe transistors are used for the oscillator sustaining amplifiers which offer reasonable levels of circulating power ∼15 dBm and gains of 5.4 dB per stage as well as low flicker noise corners between 10 and 40 kHz. To incorporate tuning, with low additional phase noise, phase shift tuning is incorporated. The theory for the design is included demonstrating close correlation with experimental results.
Keywords :
Ge-Si alloys; barium compounds; ceramics; circuit tuning; dielectric materials; dielectric resonator oscillators; flicker noise; phase noise; semiconductor materials; 10 GHz; 10 to 40 kHz; 5.4 dB; BaTiO3; BaTiO3 resonators; SiGe; SiGe transistors; amplifiers; broad tuning ultra low noise DRO; ceramic based resonators; dielectric resonator oscillator; flicker noise; phase noise; phase shift tuning; 1f noise; Ceramics; Dielectrics; Gain; Germanium silicon alloys; Low-noise amplifiers; Oscillators; Phase noise; Silicon germanium; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium and PDA Exhibition Jointly with the 17th European Frequency and Time Forum, 2003. Proceedings of the 2003 IEEE International
ISSN :
1075-6787
Print_ISBN :
0-7803-7688-9
Type :
conf
DOI :
10.1109/FREQ.2003.1275127
Filename :
1275127
Link To Document :
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