DocumentCode :
2658514
Title :
Efficiency impact of MOSFET output junction capacitance on a high step down ratio phase shift full bridge DC/DC converter
Author :
Yutian Cui ; Weimin Zhang ; Tolbert, Leon M. ; Costinett, Daniel J. ; Wang, Fred ; Blalock, Benjamin J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
fYear :
2015
fDate :
15-19 March 2015
Firstpage :
2083
Lastpage :
2089
Abstract :
In this paper, the design of a high step down ratio (66:1) phase shift full bridge (PSFB) DC/DC converter used for data center power supplies in terms of primary side MOSFETs selection is covered. A detailed analysis of the converter´s operation considering the impact of the output junction capacitance of primary side MOSFETs on the current RMS value has been performed. The study shows that a smaller output junction capacitance will lead to a smaller RMS current value on both primary and secondary side. For the high step down phase shift full bridge converter, transformer winding loss is the dominant loss; the reduction of current through the transformer will lead to a higher efficiency of the whole converter. This phenomenon is observed in experimental waveforms, and its impact on the converter´s efficiency is also validated through experiment.
Keywords :
DC-DC power convertors; MOSFET; MOSFET output junction capacitance; PSFB DC-DC converter; RMS value; data center power supply; high step down ratio phase shift full bridge DC-DC converter efficiency; output junction capacitance; primary side MOSFETs selection; transformer winding loss; Bridge circuits; Capacitance; Gallium nitride; Junctions; MOSFET; Silicon; Soft switching; GaN; Phase shift full bridge converter; high efficiency; high step down ratio; output junction capacitance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
Conference_Location :
Charlotte, NC
Type :
conf
DOI :
10.1109/APEC.2015.7104636
Filename :
7104636
Link To Document :
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