Title :
Design and modeling of a high fT and fmax heterojunction bipolar transistor
Author :
Chan, Pik-Yiu ; Jain, Faquir C.
Author_Institution :
Univ. of Connecticut, Storrs
Abstract :
This work presents an InGaAs/InP heterojunction bipolar transistor design aiming at lowering the transit time in the collector region by controlling and reducing the high field region in the structure, thus giving very high mobility in the collector region and a high fT for a given lateral size.
Keywords :
heterojunction bipolar transistors; InGaAs-InP; heterojunction bipolar transistor design; heterojunction bipolar transistor moldelling; transit time; Doping; Educational institutions; Electron devices; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Semiconductor process modeling; Solid modeling; USA Councils;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422393
