Title :
Design and simulation of strained Si/SiGe dual channel MOSFETs
Author :
Goyal, Puneet ; Moon, James E. ; Kurinec, Santosh K.
Author_Institution :
Rochester Inst. of Technol., Rochester
Abstract :
This paper reports the design, modeling and simulation of NMOS and PMOS transistors with a tensile strained Si channel layer and compressively strained SiGe channel layer for a 65 nm logic technology node. A unified modeling approach consisting of different physics based models has been formulated in this work and their ability to predict the device behavior has been investigated.
Keywords :
Ge-Si alloys; MOSFET; NMOS transistor; PMOS transistor; dual channel MOSFET; strained Si-SiGe channel layer; Analytical models; Germanium silicon alloys; MOS devices; MOSFETs; Paper technology; Photonic band gap; Physics; Predictive models; Silicon germanium; Substrates;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422396
