Title :
Comparisons on performance improvement by nitride capping layer among different channel directions nMOSFETs
Author :
Tsai, Tzu-I ; Lee, Yao-Jen ; Chen, King-Sheng ; Wang, Jeff ; Hsueh, Fu-Kuo ; Lin, Horng-Chih ; Huang, Tiao-Yuan
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
In this study, we propose the electrical characteristics and reliability behaviors of nMOSFETs using SiN capping layer on Hi- or Cz-wafers on different channel directions.
Keywords :
MOSFET; semiconductor device reliability; silicon compounds; MOSFET; SiN; capping layer; channel directions; semiconductor device reliability; silicon nitride; Annealing; Degradation; Educational institutions; Electron mobility; Hydrogen; Laboratories; MOSFETs; Nanotechnology; Silicon compounds; Uniaxial strain;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422402
