Title :
CMOS-compatible light emission device based on thin aluminum nitride film containing Al nanocrystals
Author :
Liu, Y. ; Chen, T.P. ; Yang, M. ; Liu, Z. ; Ding, L. ; Zhang, S. ; Li, Y.B.
Author_Institution :
Nanyang Technol. Univ., Singapore
Abstract :
Aluminum nitride (AlN) films have attractive physical properties, such as wide bandgap (6.2 eV), high thermal conductivity (320 W/mK), and good match of both thermal expansion coefficient and lattice constant to those of Si substrate . Based on these properties, AlN films can be applied in surface acoustic wave (SAW) devices, memories devices, and optoelectronic devices. It has been reported in our recent studies that amorphous AlN thin films containing aluminum nanocrystals (nc-Al) deposited on Si substrate by radio-frequency (rf) magnetron sputtering possess memory effect and exhibit interesting current conduction behaviors.
Keywords :
CMOS integrated circuits; aluminium compounds; lattice constants; light emitting devices; nanostructured materials; sputtering; thermal conductivity; thermal expansion; AlN-Al; CMOS-compatible light emission device; Si; aluminium nanocrystals; aluminum nanocrystals deposition; aluminum nitride films; electron volt energy 6.2 eV; high thermal conductivity; lattice constant; memories devices; memory effect; optoelectronic devices; radio-frequency magnetron sputtering; surface acoustic wave devices; thermal expansion coefficient; thin aluminum nitride film; Aluminum nitride; Conductive films; Lattices; Nanocrystals; Photonic band gap; Semiconductor films; Sputtering; Substrates; Thermal conductivity; Thermal expansion;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422405
