Title :
Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers
Author :
Pham, A.T. ; Jungemann, C. ; Klawitter, M. ; Menerzhagen, B.
Author_Institution :
Tech. Univ. Braunschweig, Braunschweig
Abstract :
Low and high field transport of holes in strained SiGe on insulator inversion layers is studied by solving BTE with a new accurate and efficient non-stochastic method for the first time. Alloy scattering is found to have a strong impact on hole transport. Strain enhances both the low-field mobility and the high-field drift velocity.
Keywords :
Boltzmann equation; Ge-Si alloys; carrier mobility; inversion layers; semiconductor materials; silicon-on-insulator; BTE; Boltzmann transport equation; Si; SiGe; alloy scattering; high-field drift velocity; hole transport; inversion layers; low-field mobility; nonstochastic method; silicon germaniun on insulator; silicon on insulator; Distribution functions; Educational institutions; Electron mobility; Germanium silicon alloys; Insulation; MOSFETs; Phonons; Scattering; Silicon germanium; Uniaxial strain;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422476
