Title :
Two-Band k·p model for the conduction band in silicon: impact of Strain and confinement on band structure and mobility
Author :
Sverdlov, Viktor ; Karlowatz, Gerhard ; Dhar, Siddhartha ; Kosina, Hans ; Selberherr, Siegfried
Author_Institution :
Tech. Univ. Wien, Vienna
Abstract :
In this work we demonstrate that the two-band kldrp model ((Sverdlov et al., 2007) describes accurately dependences of the valley shifts and the effective masses on the shear strain component. The theory includes non-parabolicity effects due to the interaction between the two lowest conduction bands and provides an analytical expression for the dependence of the effective masses on shear strain.
Keywords :
conduction bands; effective mass; elemental semiconductors; k.p calculations; semiconductor thin films; silicon; conduction band; confinement impact; effective masses; non-parabolicity effects; shear strain; strain impact; two-band kldrp model; valley shifts; Capacitive sensors; Compressive stress; Dispersion; Educational institutions; Effective mass; MOSFETs; Microelectronics; Semiconductor films; Silicon; Tensile stress;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1891-6
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422477
