Silicon nanowire memory application using hafnium oxide charge storage layer

Author

Zhu, Xiaoxiao ; Li, Qiliang ; Ioannou, Dimitris E. ; Kimes, William A. ; Suehle, John S. ; Maslar, James E. ; Xiong, Hao D. ; Yang, Shuo ; Richter, Curt A.

Author_Institution

George Mason Univ., Fairfax

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

This paper discusses about SiNW-based non-volatile memory based on self-aligned CVD-grown SiNWs and a HfO₂ charge storage layer. With double gates and surrounding top gate high-k dielectric stacks, the SiNWs memory devices operates with a small program/erase voltage and low power consumption. Compared to previous work on SiNW SONOS memory devices, structures that use HfO₂ as a top gate surrounding dielectric exhibit better gate control, a larger memory window, and a higher ON/OFF current ratio. Additionally, this self-aligned method of integrating SiNWs into memory devices is more practical for large-scale fabrication.

Keywords

chemical vapour deposition; dielectric thin films; hafnium compounds; nanowires; semiconductor storage; silicon; HfO₂; ON/OFF current ratio; Si; SiNW SONOS memory device comparison; hafnium oxide charge storage layer; high-k dielectric stacks; self-aligned CVD-growth; silicon nanowire based nonvolatile memory device; Dielectric devices; Energy consumption; Fabrication; Hafnium oxide; High-K gate dielectrics; Large scale integration; Low voltage; Nonvolatile memory; SONOS devices; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422492

Filename

4422492